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View irfb3306gpbf detailed specification:

PD - 96211 IRFB3306GPbF HEXFET Power MOSFET Applications D VDSS 60V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 3.3m l Uninterruptible Power Supply l High Speed Power Switching max. 4.2m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 160A ID (Package Limited) 120A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt D Ruggedness l Fully Characterized Capacitance and Avalanche SOA S l Enhanced body diode dV/dt and dI/dt Capability D G l Lead-Free TO-220AB l Halogen-Free IRFB3306GPbF GDS Gate Drain Source Absolute Maximum Ratings Symbol Parameter Max. Units ID @ TC = 25 C Continuous Drain Current, VGS @ 10V (Silicon Limited) 160 ID @ TC = 100 C Continuous Drain Current, VGS @ 10V (Silicon Limited) 110 A ID @ TC = 25 C Continuous Drain Current, VGS @ 10V (Wire Bond Limited) 120 IDM Pulsed Drai... See More ⇒

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