View irfb3306gpbf datasheet:

PD - 96211IRFB3306GPbFHEXFET Power MOSFETApplicationsDVDSS60Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.3.3ml Uninterruptible Power Supplyl High Speed Power Switching max. 4.2ml Hard Switched and High Frequency CircuitsGID (Silicon Limited) 160A ID (Package Limited)120A SBenefitsl Improved Gate, Avalanche and Dynamic dV/dtDRuggednessl Fully Characterized Capacitance and AvalancheSOASl Enhanced body diode dV/dt and dI/dt Capability DGl Lead-FreeTO-220ABl Halogen-FreeIRFB3306GPbFGDSGate Drain SourceAbsolute Maximum RatingsSymbol Parameter Max. UnitsID @ TC = 25C Continuous Drain Current, VGS @ 10V (Silicon Limited)160ID @ TC = 100C Continuous Drain Current, VGS @ 10V (Silicon Limited)110AID @ TC = 25C Continuous Drain Current, VGS @ 10V (Wire Bond Limited)120IDMPulsed Drai

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