View irfb3407zpbf detailed specification:
IRFB3407ZPbF HEXFET Power MOSFET Applications VDSS 75V D l Battery Management RDS(on) typ. 5.0m l High Speed Power Switching l Hard Switched and High Frequency Circuits max. 6.4m G ID (Silicon Limited) 122A S Benefits ID (Package Limited) 120A l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness D l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt S D Capability G l Lead-Free TO-220AB IRFB3407ZPbF GDS Gate Drain Source Ordering Information Standard Pack Base part number Package Type Complete Part Number Form Quantity IRFB3407ZPbF TO-220 IRFB3407ZPbF Tube 50 Absolute Maximum Ratings Symbol Parameter Max. Units ID @ TC = 25 C Continuous Drain Current, VGS @ 10V (Silicon Limited) 122 ID @ TC = 100 C Continuous Drain Current, VGS @ 10V (Silicon Limited) 86 A ID @ TC = 25 C Continuous Drain C... See More ⇒
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irfb3407zpbf.pdf Design, MOSFET, Power
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