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View irfb3607gpbf detailed specification:

PD - 96329 IRFB3607GPbF Applications l High Efficiency Synchronous Rectification in SMPS HEXFET Power MOSFET l Uninterruptible Power Supply D l High Speed Power Switching VDSS 75V l Hard Switched and High Frequency Circuits RDS(on) typ. 7.34m G max. 9.0m Benefits ID 80A S l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness D l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt S Capability D G l Lead-Free l Halogen-Free TO-220AB IRFB3607GPbF GDS Gate Drain Source Absolute Maximum Ratings Symbol Parameter Max. Units ID @ TC = 25 C Continuous Drain Current, VGS @ 10V 80 ID @ TC = 100 C Continuous Drain Current, VGS @ 10V 56 A IDM Pulsed Drain Current 310 PD @TC = 25 C W Maximum Power Dissipation 140 Linear Derating Factor 0.96 W/ C VGS V Gate-to-Source Voltage 20 dv/dt Peak Diode Recovery 2... See More ⇒

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