View irfz44zlpbf irfz44zpbf irfz44zspbf detailed specification:

irfz44zlpbf_irfz44zpbf_irfz44zspbfirfz44zlpbf_irfz44zpbf_irfz44zspbf

PD - 95379A IRFZ44ZPbF IRFZ44ZSPbF Features Advanced Process Technology IRFZ44ZLPbF Ultra Low On-Resistance HEXFET Power MOSFET Dynamic dv/dt Rating 175 C Operating Temperature D Fast Switching VDSS = 55V Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 13.9m G Description ID = 51A S This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. TO-220AB D2Pak TO-262 IRFZ44ZPbF IRFZ44ZSPbF IRFZ44ZLPbF Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25 C 51 A Continuous Drain Current, VGS... See More ⇒

 

Keywords - ALL TRANSISTORS SPECS

 irfz44zlpbf irfz44zpbf irfz44zspbf.pdf Design, MOSFET, Power

 irfz44zlpbf irfz44zpbf irfz44zspbf.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irfz44zlpbf irfz44zpbf irfz44zspbf.pdf Database, Innovation, IC, Electricity