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View irg7pg35u detailed specification:

IRG7PG35UPbF IRG7PG35U-EPbF INSULATED GATE BIPOLAR TRANSISTOR C VCES = 1000V Features Low VCE (ON) trench IGBT technology IC = 35A, TC = 100 C Low switching losses G TJ(MAX) = 175 C Square RBSOA 100% of the parts tested for ILM E VCE(ON) typ. = 1.9V@ IC = 20A Positive VCE (ON) temperature co-efficient n-channel Tight parameter distribution Lead-free package C C Benefits High efficiency in a wide range of applications Suitable for a wide range of switching frequencies due to low VCE(on) and low switching losses E E C C G G Rugged transient performance for increased reliability IRG7PG35U-EPbF Excellent current sharing in parallel operation IRG7PG35UPbF TO-247AD TO-247AC Applications U.P.S. G C E Welding Gate Collector ... See More ⇒

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