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View irg7ph50u-e detailed specification:

PD - 97549 IRG7PH50UPbF INSULATED GATE BIPOLAR TRANSISTOR IRG7PH50U-EP Features C Low VCE (ON) trench IGBT technology VCES = 1200V Low switching losses Maximum junction temperature 175 C IC = 90A, TC = 100 C Square RBSOA 100% of the parts tested for ILM G TJ(max) =175 C Positive VCE (ON) temperature co-efficient E Tight parameter distribution VCE(on) typ. = 1.7V Lead -Free n-channel Benefits High efficiency in a wide range of applications C C Suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses Rugged transient performance for increased reliability Excellent current sharing in parallel operation E E C C G G Applications TO-247AC TO-247AD IRG7PH50UPbF IRG7PH50U-EP U.P.S Welding GC E Solar inverter Gate Collector Emitter Induction heatin... See More ⇒

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