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View irg7psh54k10d detailed specification:

IRG7PSH54K10DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C VCES = 1200V IC = 65A, TC =100 C tSC 10 s, TJ(max) = 150 C E G C VCE(ON) typ. = 1.9V @ IC = 50A G E n-channel IRG7PSH54K10DPbF Applications Industrial Motor Drive G C E UPS Gate Collector Emitter Solar Inverters Welding Features Benefits Low VCE(ON) and switching losses High efficiency in a Wide Range of Applications 10 s Short Circuit SOA Rugged Transient Performance Square RBSOA Maximum Junction Temperature 150 C Increased Reliability Positive VCE (ON) Temperature Coefficient Excellent Current Sharing in Parallel Operation Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRG7PSH54K10DPbF Super-247 Tube 25 IRG7PSH54K10DPbF Absolute Maximum Ratings Parameter Max. Units VCES Collect... See More ⇒

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