View irg7psh54k10d datasheet:

IRG7PSH54K10DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C VCES = 1200V IC = 65A, TC =100C tSC 10s, TJ(max) = 150C E GC VCE(ON) typ. = 1.9V @ IC = 50A G En-channelIRG7PSH54K10DPbFApplications Industrial Motor Drive G C E UPS Gate Collector Emitter Solar Inverters Welding Features Benefits Low VCE(ON) and switching losses High efficiency in a Wide Range of Applications 10s Short Circuit SOA Rugged Transient Performance Square RBSOA Maximum Junction Temperature 150C Increased ReliabilityPositive VCE (ON) Temperature Coefficient Excellent Current Sharing in Parallel Operation Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRG7PSH54K10DPbF Super-247 Tube 25 IRG7PSH54K10DPbFAbsolute Maximum Ratings Parameter Max. UnitsVCES Collect

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