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View irgib15b60kd1 detailed specification:

PD- 94599A IRGIB15B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features Low VCE (on) Non Punch Through IGBT Technology. IC = 12A, TC=100 C Low Diode VF. 10 s Short Circuit Capability. G Square RBSOA. tsc > 10 s, TJ=150 C Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coefficient. E Maximum Junction Temperature Rated at 175 C VCE(on) typ. = 1.80V n-channel Benefits Benchmark Efficiency for Motor Control. Rugged Transient Performance. Low EMI. Excellent Current Sharing in Parallel Operation. TO-220 Full-Pak Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25 C Continuous Collector Current 19 IC @ TC = 100 C Continuous Collector Current 12 A ICM Pulse Collector Current (Ref.Fig.C.T.5... See More ⇒

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