View irgib6b60kd datasheet:

PD-94427D IRGIB6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features IC = 6.0A, TC=90 C Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. G 10 s Short Circuit Capability. tsc > 10 s, TJ=175 C Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics. E Positive VCE (on) Temperature Coefficient. VCE(on) typ. = 1.8V n-channel Benefits Benchmark Efficiency for Motor Control. Rugged Transient Performance. Low EMI. Excellent Current Sharing in Parallel Operation. TO-220 Full-Pak Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25 C Continuous Collector Current 11 IC @ TC = 100 C Continuous Collector Current 7.0 A ICM Pulse Collector Current (Ref.Fig.C.T.5) 22 Clamped Inductive Load current ILM 22 IF @ T... See More ⇒

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