View irgib6b60kd datasheet:

PD-94427DIRGIB6B60KDINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECVCES = 600VFeaturesIC = 6.0A, TC=90C Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF.G 10s Short Circuit Capability.tsc > 10s, TJ=175C Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.E Positive VCE (on) Temperature Coefficient.VCE(on) typ. = 1.8Vn-channelBenefits Benchmark Efficiency for Motor Control. Rugged Transient Performance. Low EMI. Excellent Current Sharing in Parallel Operation.TO-220Full-PakAbsolute Maximum RatingsParameter Max. UnitsVCES Collector-to-Emitter Voltage 600 VIC @ TC = 25C Continuous Collector Current 11IC @ TC = 100C Continuous Collector Current 7.0 AICM Pulse Collector Current (Ref.Fig.C.T.5) 22Clamped Inductive Load current ILM 22IF @ T

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