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View irgib7b60kd detailed specification:

PD - 94620B IRGIB7B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features Low VCE (on) Non Punch Through IGBT Technology. IC = 8.0A, TC=100 C 10 s Short Circuit Capability. G Square RBSOA. tsc > 10 s, TJ=150 C Positive VCE (on) Temperature Coefficient. E Maximum Junction Temperature rated at 175 C. VCE(on) typ. = 1.8V n-channel Benefits Benchmark Efficiency for Motor Control. Rugged Transient Performance. Low EMI. Excellent Current Sharing in Parallel Operation. TO-220AB FullPak Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25 C Continuous Collector Current 12 IC @ TC = 100 C Continuous Collector Current 8.0 A ICM Pulse Collector Current (Ref.Fig.C.T.5) 24 Clamped Inductive Load current ILM 24 IF @ TC = 25 C Diode Cont... See More ⇒

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