View irgib7b60kd datasheet:

PD - 94620BIRGIB7B60KDINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODE CVCES = 600VFeatures Low VCE (on) Non Punch Through IGBT Technology.IC = 8.0A, TC=100C 10s Short Circuit Capability.G Square RBSOA.tsc > 10s, TJ=150C Positive VCE (on) Temperature Coefficient.E Maximum Junction Temperature rated at 175C.VCE(on) typ. = 1.8Vn-channelBenefits Benchmark Efficiency for Motor Control. Rugged Transient Performance. Low EMI. Excellent Current Sharing in Parallel Operation.TO-220ABFullPakAbsolute Maximum RatingsParameter Max. UnitsVCES Collector-to-Emitter Voltage 600 VIC @ TC = 25C Continuous Collector Current 12IC @ TC = 100C Continuous Collector Current 8.0 AICM Pulse Collector Current (Ref.Fig.C.T.5) 24Clamped Inductive Load current ILM 24IF @ TC = 25C Diode Cont

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