View irgp30b120kd-e detailed specification:

irgp30b120kd-eirgp30b120kd-e

PD- 93818A IRGP30B120KD-E INSULATED GATE BIPOLAR TRANSISTOR WITH Motor Control Co-Pack IGBT ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 1200V Low VCE(on) Non Punch Through (NPT) Technology Low Diode VF (1.76V Typical @ 25A & 25 C) VCE(on) typ. = 2.28V 10 s Short Circuit Capability G Square RBSOA VGE = 15V, IC = 25A, 25 C Ultrasoft Diode Recovery Characteristics E Positive VCE(on) Temperature Coefficient N-channel Extended Lead TO-247AD Package Benefits Benchmark Efficiency for Motor Control Applications Rugged Transient Performance Low EMI Significantly Less Snubber Required Excellent Current Sharing in Parallel Operation Longer leads for Easier Mounting TO-247AD Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Breakdown Voltage 1200 V IC @ TC = 25 C Continu... See More ⇒

 

Keywords - ALL TRANSISTORS SPECS

 irgp30b120kd-e.pdf Design, MOSFET, Power

 irgp30b120kd-e.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irgp30b120kd-e.pdf Database, Innovation, IC, Electricity