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View irgp4062d detailed specification:

IRGB4062DPbF IRGP4062DPbF IRGP4062D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 600V Low VCE (ON) Trench IGBT Technology Low switching losses IC = 24A, TC = 100 C Maximum Junction temperature 175 C 5 S short circuit SOA G tSC 5 s, TJ(max) = 175 C Square RBSOA 100% of the parts tested for ILM E VCE(on) typ. = 1.65V Positive VCE (ON) Temperature co-efficient n-channel Ultra fast soft Recovery Co-Pak Diode Tight parameter distribution C C C Lead Free Package Benefits E E High Efficiency in a wide range of applications E C C C G Suitable for a wide range of switching frequencies due to G G Low VCE (ON) and Low Switching losses Rugged transient Performance for increased reliability TO-220AB TO-247AC TO-247AD IRGB4062DPbF IRGP4062DPbF IRGP40... See More ⇒

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