View irgp4063d datasheet:

PD - 97210 IRGP4063DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low VCE (ON) Trench IGBT Technology C VCES = 600V Low switching losses Maximum Junction temperature 175 C IC = 48A, TC = 100 C 5 S short circuit SOA Square RBSOA G tSC 5 s, TJ(max) = 175 C 100% of the parts tested for 4X rated current (ILM) Positive VCE (ON) Temperature co-efficient E VCE(on) typ. = 1.65V Ultra fast soft Recovery Co-Pak Diode n-channel Tight parameter distribution Lead Free Package Benefits C High Efficiency in a wide range of applications Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses E C Rugged transient Performance for increased reliability G Excellent Current sharing in parallel operation Low EMI TO-247AC GC E Ga... See More ⇒

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