View irgp4063d datasheet:

PD - 97210IRGP4063DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEFeatures Low VCE (ON) Trench IGBT Technology CVCES = 600V Low switching losses Maximum Junction temperature 175 CIC = 48A, TC = 100C 5 S short circuit SOA Square RBSOAG tSC 5s, TJ(max) = 175C 100% of the parts tested for 4X rated current (ILM) Positive VCE (ON) Temperature co-efficientEVCE(on) typ. = 1.65V Ultra fast soft Recovery Co-Pak Dioden-channel Tight parameter distribution Lead Free PackageBenefitsC High Efficiency in a wide range of applications Suitable for a wide range of switching frequencies due toLow VCE (ON) and Low Switching lossesEC Rugged transient Performance for increased reliabilityG Excellent Current sharing in parallel operation Low EMITO-247ACGC EGa

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