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View irgp4620d detailed specification:

IRGS4620DPbF IRGB4620DPbF IRGP4620D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C VCES = 600V C C C C IC = 20A, TC =100 C E E E E C G C C C G tSC 5 s, TJ(max) = 175 C G G G E IRGS4620DPbF IRGB4620DPbF IRGP4620DPbF IRGP4620D-EPbF VCE(ON) typ. = 1.55V @ IC = 12A D2Pak TO-220AC TO-247AC TO-247AD n-channel Applications G C E Appliance Drive Gate Collector Emitter Inverters UPS Features Benefits Low VCE(ON) and switching losses High efficiency in a wide range of applications and switching Improved reliability due to rugged hard switching Square RBSOA and maximum junction temperature 175 C performance and high power capability Positive VCE (ON) temperature coefficient and tight Excellent current sharing in parallel operation distribution of parameters 5 s Short C... See More ⇒

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