View irgp4620d datasheet:

IRGS4620DPbF IRGB4620DPbF IRGP4620D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode CVCES = 600V C C C C IC = 20A, TC =100C E E E E C GC C C G tSC 5s, TJ(max) = 175C G G G EIRGS4620DPbF IRGB4620DPbF IRGP4620DPbF IRGP4620D-EPbF VCE(ON) typ. = 1.55V @ IC = 12A D2Pak TO-220AC TO-247AC TO-247AD n-channelApplications G C E Appliance Drive Gate Collector Emitter Inverters UPS Features Benefits Low VCE(ON) and switching losses High efficiency in a wide range of applications and switching Improved reliability due to rugged hard switching Square RBSOA and maximum junction temperature 175C performance and high power capability Positive VCE (ON) temperature coefficient and tight Excellent current sharing in parallel operation distribution of parameters 5s Short C

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