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View irgps4067d detailed specification:

PD - 97736 IRGPS4067DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 600V Low VCE (on) Trench IGBT Technology Low Switching Losses IC(Nominal) = 120A 5 s SCSOA Square RBSOA G tSC 5 s, TJ(max) = 175 C 100% of The Parts Tested for ILM Positive VCE (on) Temperature Coefficient. E VCE(on) typ. = 1.70V Ultra Fast Soft Recovery Co-pak Diode Tighter Distribution of Parameters n-channel Lead-Free, RoHS Compliant C Benefits High Efficiency in a Wide Range of Applications Suitable for a Wide Range of Switching Frequencies due E to Low VCE (ON) and Low Switching Losses C G Rugged Transient Performance for Increased Reliability Excellent Current Sharing in Parallel Operation Low EMI Super-247 G C E Gate Collector Emitter Absolute Maximum Ratings Paramete... See More ⇒

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