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View irgs4610d detailed specification:

IRGR4610DPbF IRGS4610DPbF IRGB4610DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C C VCES = 600V C C IC = 10A, TC = 100 C E E E C G G G G tsc > 5 s, Tjmax = 175 C D-Pak E D2-Pak TO-220AB VCE(on) typ. = 1.7V @ 6A IRGR4610DPbF IRGS4610DPbF IRGB4610DPbF n-channel GCE Applications Gate Collector Emitter Appliance Drives Inverters UPS Features Benefits Low VCE(ON) and switching losses High efficiency in a wide range of applications and switching frequencies Improved reliability due to rugged hard switching performance and higher Square RBSOA and maximum junction temperature 175 C power capability Positive VCE(ON) temperature coefficient and tighter distribution of Excellent current sharing in parallel operation parameters 5 s short circuit SOA Enables short circuit protection scheme Lead-free, RoHS comp... See More ⇒

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