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View irgs4615d detailed specification:

IRGS4615DPbF IRGB4615DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C C VCES = 600V C IC = 15A, TC = 100 C E E C G G tsc > 5 s, Tjmax = 175 C G E VCE(on) typ. = 1.55V @ 8A TO-220AB D2-Pak n-channel IRGB4615DPbF IRGS4615DPbF GCE Gate Collector Emitter Applications Appliance Drives Inverters UPS Features Benefits Low VCE(ON) and switching losses High efficiency in a wide range of applications and switching frequencies Improved reliability due to rugged hard switching performance and higher Square RBSOA and maximum junction temperature 175 C power capability Positive VCE(ON) temperature coefficient and tighter distribution of Excellent current sharing in parallel operation parameters 5 s short circuit SOA Enables short circuit protection scheme Lead-free, RoHS compliant Environmentally friendly Base ... See More ⇒

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