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FSYA250D, FSYA250R 27A, 200V, 0.100 Ohm, Rad Hard, June 1998 SEGR Resistant, N-Channel Power MOSFETs Features Description 27A, 200V, rDS(ON) = 0.100 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RAD (Si) tions. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particu- Single Event lar, is combined with 100K RADS of total dose hardness to - Safe Operating Area Curve for Single Event Effects provide devices which are ideally suited to harsh space envi- - SEE Immunity for LET of 36MeV/mg/cm2 with ronments. The dose rate and neutron tolerance necessary VDS up to 80% of Rated Breakdown and for military applications have not been sacr... See More ⇒

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