View fsya250 datasheet:

FSYA250D,FSYA250R27A, 200V, 0.100 Ohm, Rad Hard,June 1998 SEGR Resistant, N-Channel Power MOSFETsFeatures Description 27A, 200V, rDS(ON) = 0.100 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RAD (Si)tions. Enhanced Power MOSFET immunity to Single EventEffects (SEE), Single Event Gate Rupture (SEGR) in particu- Single Eventlar, is combined with 100K RADS of total dose hardness to- Safe Operating Area Curve for Single Event Effectsprovide devices which are ideally suited to harsh space envi-- SEE Immunity for LET of 36MeV/mg/cm2 with ronments. The dose rate and neutron tolerance necessaryVDS up to 80% of Rated Breakdown and for military applications have not been sacr

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