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HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS Data Sheet January 2000 File Number 4597.2 21A, 1200V, NPT Series N-Channel IGBTs Features with Anti-Parallel Hyperfast Diodes 21A, 1200V, TC = 25oC The HGTG5N120BN, HGTP5N120BND, and 1200V Switching SOA Capability HGT1S5N120BNDS are Non-Punch Through (NPT) IGBT Typical Fall Time. . . . . . . . . . . . . . . . 175ns at TJ = 150oC designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best Short Circuit Rating features of MOSFETs and bipolar transistors. This device Low Conduction Loss has the high input impedance of a MOSFET and the low on- state conduction loss of a bipolar transistor. The IGBT used Thermal Impedance SPICE Model is the development type TA49308. The Diode used is the Temperature Compensating SABER Model www.intersil.com development ty... See More ⇒

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