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IRF646 Data Sheet June 1999 File Number 2169.3 14A, 275V, 0.280 Ohm, N-Channel Power Features MOSFET 14A, 275V This N-Channel enhancement mode silicon gate power field rDS(ON) = 0.280 effect transistor is an advanced power MOSFET designed, Single Pulse Avalanche Energy Rated tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of SOA is Power Dissipation Limited these power MOSFETs are designed for applications such Nanosecond Switching Speeds as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching Linear Transfer Characteristics transistors requiring high speed and low gate drive power. High Input Impedance These types can be operated directly from integrated 275VDC Rating-120VAC Line System Operation ci... See More ⇒

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