View irf646 datasheet:

IRF646Data Sheet June 1999 File Number 2169.314A, 275V, 0.280 Ohm, N-Channel Power FeaturesMOSFET 14A, 275VThis N-Channel enhancement mode silicon gate power field rDS(ON) = 0.280effect transistor is an advanced power MOSFET designed, Single Pulse Avalanche Energy Ratedtested, and guaranteed to withstand a specified level ofenergy in the breakdown avalanche mode of operation. All of SOA is Power Dissipation Limitedthese power MOSFETs are designed for applications such Nanosecond Switching Speedsas switching regulators, switching convertors, motor drivers,relay drivers, and drivers for high power bipolar switching Linear Transfer Characteristicstransistors requiring high speed and low gate drive power. High Input ImpedanceThese types can be operated directly from integrated 275VDC Rating-120VAC Line System Operationci

Keywords - ALL TRANSISTORS DATASHEET

 irf646.pdf Design, MOSFET, Power

 irf646.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irf646.pdf Database, Innovation, IC, Electricity