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View ixgt10n170 detailed specification:

VCES = 1700V High Voltage IXGH10N170 IC90 = 10A IGBT IXGT10N170 VCE(sat) 4.0V TO-247 (IXGH) Symbol Test Conditions Maximum Ratings G VCES TC = 25 C to 150 C 1700 V C C (TAB) E VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V VGES Continuous 20 V TO-268 (IXGT) VGEM Transient 30 V IC25 TC = 25 C 20 A G E IC90 TC = 90 C 10 A C (TAB) ICM TC = 25 C, 1ms 70 A SSOA VGE = 15V, TVJ = 125 C, RG = 16 ICM = 20 A G = Gate C = Collector (RBSOA) Clamped inductive load @ 0.8 VCES E = Emitter TAB = Collector PC TC = 25 C 110 W TJ -55 ... +150 C Features TJM 150 C International standard packages Tstg -55 ... +150 C JEDEC TO-268 and JEDEC TO-247 AD TL 1.6mm (0.062 in.) from case for 10s 300 C High current handling capability TSOLD Plastic body for 10 seconds 260 C MOS Gate turn-on Md Mounting torque (TO-247) 1... See More ⇒

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