All Transistors. Datasheet

 

View ixgt10n170 datasheet:

ixgt10n170ixgt10n170

VCES = 1700VHigh Voltage IXGH10N170IC90 = 10AIGBT IXGT10N170VCE(sat) 4.0VTO-247 (IXGH)Symbol Test Conditions Maximum RatingsGVCES TC = 25C to 150C 1700 VC C (TAB)EVCGR TJ = 25C to 150C, RGE = 1M 1700 VVGES Continuous 20 VTO-268 (IXGT)VGEM Transient 30 VIC25 TC = 25C 20 AGEIC90 TC = 90C 10 AC (TAB)ICM TC = 25C, 1ms 70 ASSOA VGE = 15V, TVJ = 125C, RG = 16 ICM = 20 AG = Gate C = Collector(RBSOA) Clamped inductive load @ 0.8 VCESE = Emitter TAB = CollectorPC TC = 25C 110 WTJ -55 ... +150 CFeaturesTJM 150 C International standard packagesTstg -55 ... +150 CJEDEC TO-268 andJEDEC TO-247 ADTL 1.6mm (0.062 in.) from case for 10s 300 C High current handling capabilityTSOLD Plastic body for 10 seconds 260 C MOS Gate turn-onMd Mounting torque (TO-247) 1

 

Keywords - ALL TRANSISTORS DATASHEET

 ixgt10n170.pdf Design, MOSFET, Power

 ixgt10n170.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ixgt10n170.pdf Database, Innovation, IC, Electricity

 

 
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