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View ixsa10n60b2d1 ixsp10n60b2d1 detailed specification:

High Speed IGBT IXSA 10N60B2D1 VCES = 600 V IXSP 10N60B2D1 with Diode IC25 = 20 A VCE(sat) = 2.5 V Short Circuit SOA Capability Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings TO-263 (IXSA) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V G VGEM Transient 30 V E C (TAB) IC25 TC = 25 C20 A TO-220AB (IXSP) IC110 TC = 110 C10 A IF(110) 11 A ICM TC = 25 C, 1 ms 30 A SSOA VGE= 15 V, TJ = 125 C, RG = 82 ICM = 20 A C (TAB) (RBSOA) Clamped inductive load, VGE = 20 V @ 0.8 VCES G tSC VGE = 15 V, VCE = 360 V, TJ = 125 C 10 s C E (SCSOA) RG = 150 , non repetitive PC TC = 25 C 100 W G = Gate C = Collector TJ -55 ... +150 C E = Emitter TAB = Collector TJM 150 C Tstg -55 ... +150 C Features International standard packages Maximum lead temperature for soldering 300 ... See More ⇒

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