All Transistors. Equivalents Search

View ixta02n450hv ixtt02n450hv detailed specification:

Advance Technical Information High Voltage VDSS = 4500V IXTA02N450HV Power MOSFETs ID25 = 200mA IXTT02N450HV RDS(on) 750 N-Channel Enhancement Mode TO-263 (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 4500 V TO-268 (IXTT) VDGR TJ = 25 C to 150 C, RGS = 1M 4500 V VGSS Continuous 20 V G VGSM Transient 30 V S ID25 TC = 25 C 200 mA D (Tab) IDM TC = 25 C, Pulse Width Limited by TJM 600 mA PD TC = 25 C 113 W G = Gate D = Drain S = Source Tab = Drain TJ - 55 ... +150 C TJM 150 C Tstg - 55 ... +150 C TL 1.6mm (0.062 in.) from Case for 10s 300 C TSOLD Plastic Body for 10 seconds 260 C Features FC Mounting Force (TO-263) 10..65 / 22..14.6 N/lb High Blocking Voltage Weight TO-263 2.5 g High Voltage Packages TO-268 4.0 g Advantages Easy to Mount Spa... See More ⇒

Keywords - ALL TRANSISTORS SPECS

 ixta02n450hv ixtt02n450hv.pdf Design, MOSFET, Power

 ixta02n450hv ixtt02n450hv.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ixta02n450hv ixtt02n450hv.pdf Database, Innovation, IC, Electricity