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View ixtk102n30p detailed specification:

VDSS = 300 V IXTK 102N30P PolarHTTM ID25 = 102 A Power MOSFET RDS(on) 33 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-264 (IXTK) VDSS TJ = 25 C to 150 C 300 V VDGR TJ = 25 C to 150 C; RGS = 1 M 300 V VGSS Continuous 20 V VGSM Transient 30 V G ID25 TC = 25 C 102 A D (TAB) S ID(RMS) External lead current limit 75 A IDM TC = 25 C, pulse width limited by TJM 250 A IAR TC = 25 C60 A G = Gate D = Drain S = Source TAB = Drain EAR TC = 25 C60 mJ EAS TC = 25 C 2.5 J dv/dt IS IDM, di/dt 100 A/ s, VDD VDSS, 10 V/ns Features TJ 150 C, RG = 4 l International standard package PD TC = 25 C 700 W l Unclamped Inductive Switching (UIS) TJ -55 ... +150 C rated TJM 150 C l Low package inductance Tstg -55 ... +150 C - easy to drive ... See More ⇒

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