Скачать даташит для ixtk102n30p:

VDSS = 300 VIXTK 102N30PPolarHTTMID25 = 102 APower MOSFET RDS(on) 33 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-264 (IXTK)VDSS TJ = 25 C to 150 C 300 VVDGR TJ = 25 C to 150 C; RGS = 1 M 300 VVGSS Continuous 20 VVGSM Transient 30 VGID25 TC = 25 C 102 A D(TAB)SID(RMS) External lead current limit 75 AIDM TC = 25 C, pulse width limited by TJM 250 AIAR TC = 25 C60 AG = Gate D = DrainS = Source TAB = DrainEAR TC = 25 C60 mJEAS TC = 25 C 2.5 Jdv/dt IS IDM, di/dt 100 A/s, VDD VDSS, 10 V/nsFeaturesTJ 150 C, RG = 4 lInternational standard packagePD TC = 25 C 700 WlUnclamped Inductive Switching (UIS)TJ -55 ... +150 CratedTJM 150 ClLow package inductanceTstg -55 ... +150 C- easy to drive