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View ixtk102n65x2 ixtx102n65x2 detailed specification:

Preliminary Technical Information X2-Class VDSS = 650V IXTK102N65X2 Power MOSFET ID25 = 102A IXTX102N65X2 RDS(on) 30m N-Channel Enhancement Mode Avalanche Rated TO-264P (IXTK) Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 650 V D Tab VDGR TJ = 25 C to 150 C, RGS = 1M 650 V S VGSS Continuous 30 V PLUS247 (IXTX) VGSM Transient 40 V ID25 TC = 25 C 102 A IDM TC = 25 C, Pulse Width Limited by TJM 204 A IA TC = 25 C25 A G EAS TC = 25 C3 J D Tab S PD TC = 25 C 1040 W dv/dt IS IDM, VDD VDSS, TJ 150 C 50 V/ns G = Gate D = Drain TJ -55 ... +150 C S = Source Tab = Drain TJM 150 C Tstg -55 ... +150 C Features TL Maximum Lead Temperature for Soldering 300 C TSOLD Plastic Body for 10s 260 C International Standard Packages ... See More ⇒

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