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View ixtk120n25p detailed specification:

VDSS = 250 V IXTK 120N25P PolarHTTM ID25 = 120 A Power MOSFET RDS(on) 24 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-264 (IXTK) VDSS TJ = 25 C to 175 C 250 V VDGR TJ = 25 C to 175 C; RGS = 1 M 250 V VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25 C 120 A G D (TAB) ID(RMS) External lead current limit 75 A S IDM TC = 25 C, pulse width limited by TJM 300 A G = Gate D = Drain IAR TC = 25 C60 A S = Source TAB = Drain EAR TC = 25 C60 mJ EAS TC = 25 C 2.5 J dv/dt IS IDM, di/dt 100 A/ s, VDD VDSS, 10 V/ns TJ 150 C, RG = 4 Features PD TC = 25 C 700 W TJ -55 ... +175 C l International standard package TJM 175 C l Unclamped Inductive Switching (UIS) Tstg -55 ... +150 C rated l Low package inductance TL 1.6 mm (0.062 ... See More ⇒

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