Скачать даташит для ixtk120n25p:

VDSS = 250 VIXTK 120N25PPolarHTTMID25 = 120 APower MOSFET RDS(on) 24 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-264 (IXTK)VDSS TJ = 25 C to 175 C 250 VVDGR TJ = 25 C to 175 C; RGS = 1 M 250 VVGS Continuous 20 VVGSM Transient 30 VID25 TC = 25 C 120 AGD(TAB)ID(RMS) External lead current limit 75 A SIDM TC = 25 C, pulse width limited by TJM 300 AG = Gate D = DrainIAR TC = 25 C60 AS = Source TAB = DrainEAR TC = 25 C60 mJEAS TC = 25 C 2.5 Jdv/dt IS IDM, di/dt 100 A/s, VDD VDSS, 10 V/nsTJ 150 C, RG = 4 FeaturesPD TC = 25 C 700 WTJ -55 ... +175 ClInternational standard packageTJM 175 ClUnclamped Inductive Switching (UIS)Tstg -55 ... +150 CratedlLow package inductanceTL 1.6 mm (0.062