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View ixtl2n450 detailed specification:

Advance Technical Information High Voltage VDSS = 4500V IXTL2N450 Power MOSFET ID25 = 2A RDS(on) 23 D D D D O D O (Electrically Isolated Tab) RGi w G O w ISOPLUS i5-PakTM N-Channel Enhancement Mode O S Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 4500 V S Isolated Tab VDGR TJ = 25 C to 150 C, RGS = 1M 4500 V D VGSS Continuous 20 V G = Gate S = Source VGSM Transient 30 V D = Drain ID25 TC = 25 C2 A IDM TC = 25 C, Pulse Width Limited by TJM 8A PD TC = 25 C 220 W TJ - 55 ... +150 C Features TJM 150 C Tstg - 55 ... +150 C Silicon Chip on Direct-Copper Bond (DCB) Substrate TL 1.6mm (0.062 in.) from case for 10s 300 C Isolated Mounting Surface TSOLD Plastic Body for 10s 260 C 4000V RMS Electrical Isolation FC Mounting Force 20..120 / 4.5..27 N/lb. Molding ... See More ⇒

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