View ixtl2n450 datasheet:

Advance Technical InformationHigh Voltage VDSS = 4500VIXTL2N450Power MOSFET ID25 = 2A RDS(on) 23 DDDDO DO(Electrically Isolated Tab)RGiwG O wISOPLUS i5-PakTMN-Channel Enhancement ModeOSSymbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C 4500 VSIsolated TabVDGR TJ = 25C to 150C, RGS = 1M 4500 VDVGSS Continuous 20 VG = Gate S = SourceVGSM Transient 30 VD = DrainID25 TC = 25C2 AIDM TC = 25C, Pulse Width Limited by TJM 8APD TC = 25C 220 WTJ - 55 ... +150 CFeaturesTJM 150 C Tstg - 55 ... +150 CSilicon Chip on Direct-Copper Bond(DCB) SubstrateTL 1.6mm (0.062 in.) from case for 10s 300 C Isolated Mounting SurfaceTSOLD Plastic Body for 10s 260 C 4000V~ RMS Electrical Isolation FC Mounting Force 20..120 / 4.5..27 N/lb. Molding

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