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View ixzr18n50a ixzr18n50b detailed specification:

IXZR18N50 & IXZR18N50A/B Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process VDSS = 500 V Optimized for RF Operation Ideal for Class C, D, & E Applications ID25 = 19 A RDS(on) 0.37 Symbol Test Conditions Maximum Ratings TJ = 25 C to 150 C VDSS 500 V PDC = 350 W TJ = 25 C to 150 C; RGS = 1 M VDGR 500 V Continuous VGS 20 V Transient VGSM 30 V Tc = 25 C ID25 19 A Tc = 25 C, pulse width limited by TJM IDM 95 A Tc = 25 C IAR 19 A Tc = 25 C EAR TBD mJ IS IDM, di/dt 100A/ s, VDD VDSS, 5 V/ns Tj 150 C, RG = 0.2 dv/dt IS = 0 >200 V/ns PDC 350 W Tc = 25 C, Derate 4.4W/ C above 25 C PDHS TBD W Tc = 25 C PDAMB 3.0 W RthJC TBD C/W RthJHS TBD C/W Features Symbol Test Conditions Characteristic Value... See More ⇒

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