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IXZR18N50 & IXZR18N50A/B Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process VDSS = 500 V Optimized for RF Operation Ideal for Class C, D, & E Applications ID25 = 19 A RDS(on) 0.37 Symbol Test Conditions Maximum Ratings TJ = 25C to 150C VDSS 500 V PDC = 350 W TJ = 25C to 150C; RGS = 1 M VDGR 500 V Continuous VGS 20 V Transient VGSM 30 V Tc = 25C ID25 19 A Tc = 25C, pulse width limited by TJM IDM 95 A Tc = 25C IAR 19 A Tc = 25C EAR TBD mJ IS IDM, di/dt 100A/s, VDD VDSS, 5 V/ns Tj 150C, RG = 0.2 dv/dt IS = 0 >200 V/ns PDC 350 W Tc = 25C, Derate 4.4W/C above 25C PDHS TBD W Tc = 25C PDAMB 3.0 W RthJC TBD C/W RthJHS TBD C/W Features Symbol Test Conditions Characteristic Value