All Transistors. Equivalents Search

View jng50n120flu1 detailed specification:

JNG50N120FLU1 IGBT Features 1200V,50A V =2.5V@V =15V,I =50A CE(sat)(typ.) GE C High speed switching Higher system efficiency Soft current turn-off waveforms General Description JIAEN FS-IGBTs offer lower losses and higher energy efficiency for application such as IH (induction heating),UPS, general inverter and other soft switching applications. Absolute Maximum Ratings Symbol Parameter Value Units V Collector-Emitter Voltage 1200 V CES V Gate-Emitter Voltage + 30 V GES Continuous Collector Current ( T =25 ) 100 A C I C Continuous Collector Current ( T =100 ) 50 A C I Pulsed Collector Current (Note 1) 150 A CM I Diode Continuous Forward Current ( T =100 ) 50 A F C I Diode Maximum Forward Current (Note 1) 150 A FM Maximum Power Dissipation ( T =25 ) 320 W C P D Maximum Power Dissipation ( T ... See More ⇒

Keywords - ALL TRANSISTORS SPECS

 jng50n120flu1.pdf Design, MOSFET, Power

 jng50n120flu1.pdf RoHS Compliant, Service, Triacs, Semiconductor

 jng50n120flu1.pdf Database, Innovation, IC, Electricity