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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SC3356 TRANSISTOR (NPN) SOT 23 FEATURES Low Noise and High Gain High Power Gain MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage 20 V CBO 3. COLLECTOR V Collector-Emitter Voltage 12 V CEO V Emitter-Base Voltage 3 V EBO I Collector Current 100 mA C P Collector Power Dissipation 200 mW C R Thermal Resistance From Junction To Ambient 625 /W JA Operation Junction and -55 +150 Tj,T stg Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V I =100 A, I =0 20 V (BR)CBO C E Collector-emitter breakdown voltage V I =1mA, I =0 12 V (BR)CEO C B... See More ⇒

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