View 2sc3356 datasheet:

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors2SC3356 TRANSISTOR (NPN)SOT23 FEATURES Low Noise and High Gain High Power GainMAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASESymbol Parameter Value Unit 2. EMITTERV Collector-Base Voltage 20 V CBO3. COLLECTORV Collector-Emitter Voltage 12 V CEOV Emitter-Base Voltage 3 V EBOI Collector Current 100 mA CP Collector Power Dissipation 200 mW CR Thermal Resistance From Junction To Ambient 625 /W JAOperation Junction and -55+150 Tj,T stgStorage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V I =100A, I =0 20 V (BR)CBO C ECollector-emitter breakdown voltage V I =1mA, I =0 12 V (BR)CEO C B

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