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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors D882M TRANSISTOR (NPN) TO-252-2L FEATURES 1. BASE Power Dissipation 2. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3 .EMITTER Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 3 A PC Collector Power Dissipation 1.25 W TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS ( Ta=25 unless otherwise specified ) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC = 100 A, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC = 10mA, IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE= 100 A, IC=0 5 V Collector cut-off current ICBO VCB= 40 V... See More ⇒

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