View 2sa1095 detailed specification:
JMnic Product Specification Silicon PNP Power Transistors 2SA1095 DESCRIPTION With MT-200 package Complement to type 2SC2565 High breakdown voltage High transition frequency APPLICATIONS Power amplifier applications Recommended for 100W high-fidelity audio frequency amplifer output stage PINNING(see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -160 V VCEO Collector-emitter voltage Open base -160 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -15 A IE Emitter current 15 A PC Collectorl power dissipation TC=25 150 W Tj Junction temperature 150 Tstg Storage temperature -55 150 JMnic Silicon PNP... See More ⇒
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BJT: GA1A4M | SBT42 | 2SA200-Y
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