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JMnic Product Specification Silicon PNP Power Transistors 2SA1108 DESCRIPTION With MT-200 package High power dissipation APPLICATIONS For power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -130 V VCEO Collector-emitter voltage Open base -130 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -12 A IB Base current -1.2 A PC Collector power dissipation TC=25 120 W Tj Junction temperature 150 Tstg Storage temperature -55 150 JMnic Product Specification Silicon PNP Power Transistors 2SA1108 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN T... See More ⇒

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