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View 2n5401c detailed specification:

SEMICONDUCTOR 2N5401C TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. B C FEATURES High Collector Breakdwon Voltage N DIM MILLIMETERS VCBO=-160V, VCEO=-150V A 4.70 MAX E K Low Leakage Current. B 4.80 MAX G C 3.70 MAX D ICBO=-50nA(Max.) @VCB=-120V D 0.45 E 1.00 Low Saturation Voltage F 1.27 G 0.85 VCE(sat)=-0.5V(Max.) @IC=-50mA, IB=-5mA H 0.45 _ Low Noise NF=8dB (Max.) H J 14.00 + 0.50 K 0.55 MAX F F L 2.30 M 0.45 MAX N 1.00 1 2 3 MAXIMUM RATING (Ta=25 ) 1. EMITTER 2. COLLECTOR 3. BASE CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V TO-92 VEBO Emitter-Base Voltage -5 V IC Collector Current -600 mA IB Base Current -100 mA Collector Power Dissipation PC 625 mW (Ta=25 ) Collector Power Dissipation PC 1.5 W (Tc=25 ... See More ⇒

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