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View 2n7002ka detailed specification:

2N7002KA SEMICONDUCTOR N Channel MOSFET TECHNICAL DATA ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. FEATURES E L B L ESD Protected 2000V. DIM MILLIMETERS _ + High density cell design for low RDS(ON). A 2.93 0.20 B 1.30+0.20/-0.15 Voltage controlled small signal switch. C 1.30 MAX 2 3 D 0.40+0.15/-0.05 Rugged and reliable. E 2.40+0.30/-0.20 1 G 1.90 High saturation current capablity. H 0.95 J 0.13+0.10/-0.05 K 0.00 0.10 Q L 0.55 P P M 0.20 MIN N 1.00+0.20/-0.10 MAXIMUM RATING (Ta=25 ) P 7 Q 0.1 MAX M CHARACTERISTIC SYMBOL RATING UNIT VDSS Drain-Source Voltage 60 V 1. SOURCE 2. GATE VGSS 20 Gate-Source Voltage V 3. DRAIN ID Continuous 300 Drain Current mA IDP Pulsed (Note 1) 1200 PD Drain Power Dissipation (Note 2) 350 mW SOT-23 Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range... See More ⇒

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