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View bcw68 detailed specification:

SEMICONDUCTOR BCW68 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. E L B L DIM MILLIMETERS _ + 2.93 0.20 A B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 MAXIMUM RATING (Ta=25 ) H 0.95 J 0.13+0.10/-0.05 CHARACTERISTIC SYMBOL RATING UNIT K 0.00 0.10 L 0.55 P P VCBO -60 V Collector-Base Voltage M 0.20 MIN N 1.00+0.20/-0.10 VCEO -45 V Collector-Emitter Voltage P 7 VEBO Emitter-Base Voltage -5 V M IC Collector Current -800 mA 1. EMITTER IE Emitter Current 800 mA 2. BASE 3. COLLECTOR PC * Collector Power Dissipation 350 mW Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range SOT-23 * Package Mounted On 99.9% Alumina 10 8 0.6mm. MARK SPEC Marking TYPE MARK hFE Rank Lot No. BCW68F DF Type Name BCW68G DG 1998. 6. 15 Revision No 1 1/2 D A G H N C ... See More ⇒

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